FQI4N80TU دیتاشیت

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دانلود دیتاشیت FQB4N80, FQI4N80	دانلود دیتاشیت

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Manufacturer: ON Semiconductor
Series: QFET®
Packaging: Tube
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.95A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 880pF @ 25V
FET Feature: -
Power Dissipation (Max): 3.13W (Ta), 130W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: I2PAK (TO-262)
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Base Part Number: FQI4
detail: N-Channel 800V 3.9A (Tc) 3.13W (Ta), 130W (Tc) Through Hole I2PAK (TO-262)